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HiPerFASTTM IGBT
IXGA 7N60B IXGP 7N60B
VCES IC25 VCE(sat) tfi
= 600 V = 14 A = 2V = 150 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 22 Clamped inductive load, L = 300 H TC = 25C
Maximum Ratings 600 600 20 30 14 7 30 ICM = 14 @ 0.8 VCES 54 -55 ... +150 150 -55 ... +150 300 3 3.5 0.45/4 0.55/5 4 2 V V V V A A A
TO-220AB (IXGP)
G
CE
TO-263 AA (IXGA)
G
A W C C C C Nm/lb.in. g g Features G = Gate, E = Emitter,
E
C (TAB)
C = Collector, TAB = Collector
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, (TO-220) TO-220 TO-263
* International standard packages JEDEC TO-263 surface mountable and JEDEC TO-220 AB * Medium frequency IGBT * High current handling capability * HiPerFASTTM HDMOSTM process * MOS Gate turn-on - drive simplicity Applications
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 5.5 100 500 100 1.8 2.0 V V A A nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 A, VGE = 0 V = 250 A, VCE = VGE TJ = 25C TJ = 125C
* Uninterruptible power supplies (UPS) * Switched-mode and resonant-mode power supplies * AC motor speed control * DC servo and robot drives * DC choppers Advantages * High power density * Suitable for surface mounting * Very low switching losses for high frequency applications
VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
(c) 2002 IXYS All rights reserved
98563A (06/02)
IXGA 7N60B IXGP 7N60B
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 3 7 500 VCE = 25 V, VGE = 0 V, f = 1 MHz 50 17 25 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 5 10 Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 300 H, VCE = 0.8 VCES, RG = Roff = 22 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 300 H VCE = 0.8 VCES, RG = Roff = 22 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 9 10 0.07 100 150 0.3 10 15 0.15 200 250 0.6 200 250 S pF pF pF nC nC nC ns ns mJ ns ns
Dim. A B C D E F G H J K M N Q R Pins: 2 - Collector 4 - Collector Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 1 - Gate 3 - Emitter Bottom Side
TO-220 AB Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
0.6 mJ ns ns mJ ns ns mJ 2.3 K/W
Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110
TO-263 AA Outline
(TO-220)
0.25
K/W
1. 2. 3. 4.
Gate Collector Emitter Collector Bottom Side Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029
Min. Recommended Footprint (Dimensions in inches and mm)
Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R
Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1

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